| File |
Title and Description  |
ID Number  |
Last Update  |
Software Downloads |
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Calculating Memory System Power for RLDRAM IICalculating Memory System Power for RLDRAM II
- Details how RLDRAM II devices consume power and provides tools to estimate power consumption. |
TN-49-04 |
2007-11-01T00:00:00-06:00Nov 2007 |
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RLDRAM II Clocking StrategiesRLDRAM II Clocking Strategies
- Addresses the operation of the RLDRAM II device outside the specified range of clock periods and the timing changes that occur in this mode of operation. |
TN-49-03 |
2007-05-01T00:00:00-06:00May 2007 |
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Exploring the RLDRAM II Feature SetExploring the RLDRAM II Feature Set
- Outlines the performance-enhancing features offered by RLDRAM II architecture |
TN-49-02 |
2006-01-01T00:00:00-07:00Jan 2006 |
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RLDRAM II Design GuideRLDRAM II Design Guide
- Describes the general features of circuit implementations using RLDRAM memory architecture |
TN-49-01 |
2008-06-01T00:00:00-06:00Jun 2008 |
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Product Replacement for x32 EOL SDRAMsProduct Replacement for x32 EOL SDRAMs
- Outlines recommendations for replacing or transitioning away from high density, x32 components that are nearing end of production. |
TN-48-16 |
2006-07-01T00:00:00-06:00Jul 2006 |
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Backward Compatibility for Faster SDRAMBackward Compatibility for Faster SDRAM
- Reviews the timing differences between SDRAM generations and shows how the faster Micron parts are compatible with the slower parts |
TN-48-15 |
2005-10-01T00:00:00-06:00Oct 2005 |
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Interfacing SDRAM Devices with Motorola's MPC8xxInterfacing SDRAM Devices with Motorola's MPC8xx |
TN-48-12 |
2002-02-01T00:00:00-07:00Feb 2002 |
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Power Saving FeaturesPower Saving Features |
TN-48-10 |
2002-06-01T00:00:00-06:00Jun 2002 |
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LVTTL Derating for SDRAM Slew Rate ViolationsLVTTL Derating for SDRAM Slew Rate Violations |
TN-48-09 |
2000-10-01T00:00:00-06:00Oct 2000 |
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Designing in SDRAM for Future UpgradesDesigning in SDRAM for Future Upgrades |
TN-48-08 |
2004-03-01T00:00:00-07:00Mar 2004 |
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Increasing Battery Life in LaptopsIncreasing Battery Life in Laptops |
TN-48-06 |
2000-02-01T00:00:00-07:00Feb 2000 |
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SDRAM WRITE to ACTIVE Command Timing SDRAM WRITE to ACTIVE Command Timing |
TN-48-05 |
2000-11-01T00:00:00-06:00Nov 2000 |
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Is Your Module PC100?Is Your Module PC100?
- Explains how to determine if a module using Micron SDRAMs is PC100-compliant. The speed designator on the SDRAM component does not necessarily reflect the system application speed of the module. |
TN-48-04 |
1999-02-01T00:00:00-07:00Feb 1999 |
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Designing for High Performance With Synchronous DRAM ModulesDesigning for High Performance With Synchronous DRAM Modules |
TN-48-03 |
1999-02-01T00:00:00-07:00Feb 1999 |
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Examples of READ-MODIFY-WRITE Cycles With Synchronous DRAMsExamples of READ-MODIFY-WRITE Cycles With Synchronous DRAMs |
TN-48-01 |
1999-02-01T00:00:00-07:00Feb 1999 |
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Advantages of DDR2 Differential DQS SignalingAdvantages of DDR2 Differential DQS Signaling
- Focuses on the benefits the differential DQS signaling feature provides and explains how to design with it |
TN-47-23 |
2008-03-01T00:00:00-07:00Mar 2008 |
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Designing for 1.5V, Low-Power FBDIMMsDesigning for 1.5V, Low-Power FBDIMMs
- Discusses memory power trends and identifies new low-voltage solutions for high-density DDR2 memory designs |
TN-47-22 |
2008-02-01T00:00:00-07:00Feb 2008 |
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FBDIMM – Channel Utilization (Bandwidth and Power)FBDIMM – Channel Utilization (Bandwidth and Power)
- Newly introduced FBDIMMs offer virtually unlimited scalability of density, a significantly reduced number of routed motherboard signals, and high bandwidth solutions, all with an extremely reliable channel protocol. |
TN-47-21 |
2006-10-01T00:00:00-06:00Oct 2006 |
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DDR2 (Point-to-Point) Package Sizes and Layout BasicsDDR2 (Point-to-Point) Package Sizes and Layout Basics
- General guidelines for developing the PCB floor plan. |
TN-47-20 |
2006-05-01T00:00:00-06:00May 2006 |
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DDR2 (Point-to-Point) Features and FunctionalityDDR2 (Point-to-Point) Features and Functionality
- Focuses on the unique memory requirements of point-to-point design layouts and describes DDR2 features and functionality. |
TN-47-19 |
2006-04-01T00:00:00-06:00Apr 2006 |
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DDR2 SODIMM Optimized Address/Command NetsDDR2 SODIMM Optimized Address/Command Nets
- Provides the system-level designer with an overview of the DDR2 SODIMM family and offers insight into termination techniques utilized on the commands and addresses for these modules |
TN-47-17 |
2005-05-01T00:00:00-06:00May 2005 |
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Designing for High-Density DDR2 MemoryDesigning for High-Density DDR2 Memory
- Focuses on designing for high-density memory—addressing schemes of each density, configurations, and the subtle differences between the 4-bank and new 8-bank DDR2 devices |
TN-47-16 |
2005-05-01T00:00:00-06:00May 2005 |
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DDR2 tCKE Power-Down RequirementDDR2 tCKE Power-Down Requirement
- Describes the tCKE timing parameter of DDR2 SDRAM |
TN-47-14 |
2004-12-01T00:00:00-07:00Dec 2004 |
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DDR2 Read InterruptDDR2 Read Interrupt
- Describes legal execution of a READ interrupted by a READ command |
TN-47-13 |
2004-12-01T00:00:00-07:00Dec 2004 |
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DDR2 Redundant Data Strobe (RDQS)DDR2 Redundant Data Strobe (RDQS)
- Describes how to enable the redundant data strobe (RDQS) |
TN-47-12 |
2004-12-01T00:00:00-07:00Dec 2004 |
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DDR2 Differential DQS FeatureDDR2 Differential DQS Feature
- Describes the differential DQS function of the DDR2 SDRAM |
TN-47-11 |
2004-12-01T00:00:00-07:00Dec 2004 |
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DDR2 Posted CAS# Additive Latency (both)DDR2 Posted CAS# Additive Latency (both)
- Describes the AL function of the DDR2 SDRAM device |
TN-47-10 |
2004-12-01T00:00:00-07:00Dec 2004 |
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DDR2 SDRAM Bank AddressingDDR2 SDRAM Bank Addressing
- Describes the evolution in array architecture from DDR to DDR2 SDRAM |
TN-47-09 |
2004-12-01T00:00:00-07:00Dec 2004 |
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DDR2 Package Sizes and Layout RequirementsDDR2 Package Sizes and Layout Requirements
- Covers DDR2 package sizes and layout requirements |
TN-47-08 |
2005-11-01T00:00:00-06:00Nov 2005 |
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DDR2 Simulation Support DDR2 Simulation Support
- Covers DDR2 simulation, adding to Micron's extensive array of design support tools for system designers |
TN-47-07 |
2004-08-01T00:00:00-06:00Aug 2004 |
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Updated JEDEC DDR2 Specifications (mods too)Updated JEDEC DDR2 Specifications (mods too)
- Covers the updated JEDEC specifications for systems using the initial DDR2-400 and DDR2-533 parts |
TN-47-06 |
2004-08-01T00:00:00-06:00Aug 2004 |
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Power Solutions for DDR2 Notebook PCsPower Solutions for DDR2 Notebook PCs
- Provides a general guideline for designing the DDR2 memory power circuitry |
TN-47-05 |
2004-06-01T00:00:00-06:00Jun 2004 |
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Calculating Memory System Power for DDR2Calculating Memory System Power for DDR2
- Details how DDR2 SDRAM consumes power and provides tools to estimate power consumption in a given system. |
TN-47-04 |
2006-06-01T00:00:00-06:00Jun 2006 |
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Module Pinout DecoderModule Pinout Decoder
- Provides sorted pin assignment tables and pin location figures for use in DDR2 DIMM signal identification, tracing, and troubleshooting |
TN-47-03 |
2004-08-01T00:00:00-06:00Aug 2004 |
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DDR2 SDRAM Offers New Features and FunctionalityDDR2 SDRAM Offers New Features and Functionality
- Discusses the various changes in DDR2 technology and the resulting features and benefits |
TN-47-02 |
2006-06-01T00:00:00-06:00Jun 2006 |
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Design Guide for Two-DIMM, Unbuffered SystemsDesign Guide for Two-DIMM, Unbuffered Systems
- DDR2-533 memory design guide for two-DIMM, unbuffered systems |
TN-47-01 |
2004-10-01T00:00:00-06:00Oct 2004 |
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LPSDRAM Unterminated Point-to-Point System Design: Layout and Routing TipsLPSDRAM Unterminated Point-to-Point System Design: Layout and Routing Tips
- Provides guidance for the development of multilayer board designs. |
TN-46-19 |
2008-11-01T00:00:00-06:00Nov 2008 |
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Interface Design Guide for STMicroelectronics Cartesio MicroprocessorInterface Design Guide for STMicroelectronics Cartesio Microprocessor
- Guidelines for interconnecting the STA2062 dynamic bus controller to two Micron 512Mb Mobile DDR SDRAM devices. |
TN-46-18 |
2008-08-01T00:00:00-06:00Aug 2008 |
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512Mb Mobile DDR: 95nm to 78nm Product Transition Guide512Mb Mobile DDR: 95nm to 78nm Product Transition Guide
- Discusses transition from 95nm to 78nm product technology |
TN-46-16 |
2007-09-01T00:00:00-06:00Sep 2007 |
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Low-Power Versus Standard DDR SDRAMLow-Power Versus Standard DDR SDRAM
- An overview of the functional and mechanical differences between low-power and standard DDR and a description of exclusive features of low-power DDR. |
TN-46-15 |
2007-01-01T00:00:00-07:00Jan 2007 |
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Hardware Tips for Point-to-Point System DesignHardware Tips for Point-to-Point System Design
- Proven techniques for termination, layout, and routing. |
TN-46-14 |
2008-06-01T00:00:00-06:00Jun 2008 |
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Backward Compatibility for Faster DDR SDRAMBackward Compatibility for Faster DDR SDRAM
- Reviews DDR SDRAM device speed timing differences and shows the compatibility of Micron’s faster speed grade parts with its slower ones |
TN-46-13 |
2005-08-01T00:00:00-06:00Aug 2005 |
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Power saving featuresPower saving features
- Addresses the power-saving features and power calculations of low-power Mobile DRAM memory |
TN-46-12 |
2005-10-01T00:00:00-06:00Oct 2005 |
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DDR SDRAM Point-to-Point Simulation ProcessDDR SDRAM Point-to-Point Simulation Process
- Covers rarely addressed areas of the DDR SDRAM point-to-point simulation process |
TN-46-11 |
2005-07-01T00:00:00-06:00Jul 2005 |
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Designing for 1Gb DDR SDRAMDesigning for 1Gb DDR SDRAM |
TN-46-09 |
2003-12-01T00:00:00-07:00Dec 2003 |
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Initialization Sequence for DDR SDRAMInitialization Sequence for DDR SDRAM |
TN-46-08 |
2005-10-01T00:00:00-06:00Oct 2005 |
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DDR333 Design Guide for Two-DIMM Unbuffered SystemsDDR333 Design Guide for Two-DIMM Unbuffered Systems |
TN-46-07 |
2002-12-01T00:00:00-07:00Dec 2002 |
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Termination for Point-to-Point SystemsTermination for Point-to-Point Systems |
TN-46-06 |
2001-09-01T00:00:00-06:00Sep 2001 |
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General DDR SDRAM FunctionalityGeneral DDR SDRAM Functionality |
TN-46-05 |
2001-07-01T00:00:00-06:00Jul 2001 |
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Synchronous Timing for DDR SDRAMSynchronous Timing for DDR SDRAM |
TN-46-04 |
2001-05-01T00:00:00-06:00May 2001 |
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Calculating DDR Memory System PowerCalculating DDR Memory System Power |
TN-46-03 |
2005-03-01T00:00:00-07:00Mar 2005 |
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Decoupling Capacitor Calculation for a DDR Memory Channel Decoupling Capacitor Calculation for a DDR Memory Channel |
TN-46-02 |
2004-07-01T00:00:00-06:00Jul 2004 |
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High speed DRAM controller designHigh speed DRAM controller design
- Identifies and discusses five key areas of DRAM controller design |
TN-45-54 |
2008-04-01T00:00:00-06:00Apr 2008 |
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Connecting Micron® CellularRAM® Devices with the Atmel® MicrocontrollerConnecting Micron® CellularRAM® Devices with the Atmel® Microcontroller
- Describes the preferred methods for connecting Micron CellularRAM devices to the Amtel microcontroller |
TN-45-33 |
2008-07-01T00:00:00-06:00Jul 2008 |
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PSRAM 101: An Introduction to Micron CellularRAM and PSRAMPSRAM 101: An Introduction to Micron CellularRAM and PSRAM
- Demonstrates PSRAM and CellularRAM memory advantages over other memory options for use in mobile handsets; and presents available configurations |
TN-45-30 |
2008-06-01T00:00:00-06:00Jun 2008 |
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Using Micron® Asynchronous PSRAM with the NXP LPC2292 and LPC2294 MicrocontrollersUsing Micron® Asynchronous PSRAM with the NXP LPC2292 and LPC2294 Microcontrollers
- Describes the design requirements for a seamless memory connection between the NXP LPC2292 and LPC2294 family of microcontrollers and a Micron asynchronous PSRAM device. |
TN-45-29 |
2007-06-01T00:00:00-06:00Jun 2007 |
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Using a Micron CellularRAM® Device with the AMCC PPC405EZ Embedded ProcessorUsing a Micron CellularRAM® Device with the AMCC PPC405EZ Embedded Processor
- Describes the design requirements for a seamless memory connection between the PPC405EZ and a Micron CellularRAM device. |
TN-45-28 |
2007-06-01T00:00:00-06:00Jun 2007 |
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Using Micron Asynchronous PSRAM with ADI ADSP-BF53x Blackfin® ProcessorsUsing Micron Asynchronous PSRAM with ADI ADSP-BF53x Blackfin® Processors
- Describes the design requirements for a seamless memory connection between Analog Device’s Blackfin® processors and Micron® 70ns, 8Mb asynchronous PSRAM devices. |
TN-45-27 |
2007-06-01T00:00:00-06:00Jun 2007 |
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WAIT Alignment for Micron CellularRAM DevicesWAIT Alignment for Micron CellularRAM Devices
- Describes the implementation of WAIT functionality for asynchronous and burst operations |
TN-45-25 |
2007-02-01T00:00:00-07:00Feb 2007 |
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Fixed-Latency Operation in CellularRAM 1.0 DevicesFixed-Latency Operation in CellularRAM 1.0 Devices
- Details how Micron has enhanced CellularRAM CR1.0 functionality |
TN-45-24 |
2006-08-01T00:00:00-06:00Aug 2006 |
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Using CellularRAM Memory on a NOR FLASH BusUsing CellularRAM Memory on a NOR FLASH Bus
- Discusses design considerations when placing a CellularRAM memory device on a NOR Flash bus |
TN-45-23 |
2006-08-01T00:00:00-06:00Aug 2006 |
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Variable vs. Fixed Latency CellularRAM™ OperationVariable vs. Fixed Latency CellularRAM™ Operation
- This technical note assists designers in understanding the differences between CellularRAM variable and fixed latency operations. |
TN-45-22 |
2006-08-01T00:00:00-06:00Aug 2006 |
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Low-Power Options for Async/Page CellularRAM Low-Power Options for Async/Page CellularRAM
- Discusses the low-power options available to customers on async/page CellularRAM memory devices |
TN-45-20 |
2006-05-01T00:00:00-06:00May 2006 |
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Using CellularRAM® Memory to Replace NEC Mobile Specified RAM (µPD46128512)Using CellularRAM® Memory to Replace NEC Mobile Specified RAM (µPD46128512)
- Discusses migrating a 128Mb NEC Mobile Specified RAM design (µPD46128512) to Micron 128Mb CellularRAM memory (MT45W8MW16B). Both hardware and software changes are covered. |
TN-45-18 |
2006-03-01T00:00:00-07:00Mar 2006 |
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Using CellularRAM® Memory to Replace Single- and Dual-Chip Select SRAMUsing CellularRAM® Memory to Replace Single- and Dual-Chip Select SRAM
- Discusses migrating a single- or dual-chip select SRAM design to Micron® CellularRAM® memory. Both hardware and software changes are covered. |
TN-45-17 |
2007-01-01T00:00:00-07:00Jan 2007 |
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Using CellularRAM Memory to Replace Fujitsu 1.8V FCRAMUsing CellularRAM Memory to Replace Fujitsu 1.8V FCRAM
- Discusses replacing Fujitsu 1.8V FCRAM with Micron CellularRAM memory |
TN-45-16 |
2006-03-01T00:00:00-07:00Mar 2006 |
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Row Boundary Crossing Functionality in CellularRAM™ MemoryRow Boundary Crossing Functionality in CellularRAM™ Memory
- Explains row boundary crossing in Micron CellularRAM memory devices |
TN-45-15 |
2007-09-01T00:00:00-06:00Sep 2007 |
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Using CellularRAM Memory to Replace Fujitsu 3V FCRAMUsing CellularRAM Memory to Replace Fujitsu 3V FCRAM
- Discusses replacing Fujitsu 3V FCRAM with Micron CellularRAM memory |
TN-45-14 |
2006-03-01T00:00:00-07:00Mar 2006 |
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Using CellularRAM Memory to Replace UtRAMUsing CellularRAM Memory to Replace UtRAM
- Assists migration from a 128Mb UtRAM design (K1B2816B6M) to Micron 128Mb CellularRAM memory (MT45W8MW16B). Both hardware and software changes are covered. |
TN-45-13 |
2006-02-01T00:00:00-07:00Feb 2006 |
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Designing Applications with the x16 Burst A/D Multiplexed InterfaceDesigning Applications with the x16 Burst A/D Multiplexed Interface
- Discusses the differences between a burst non-A/D MUX and burst A/D MUX device |
TN-45-10 |
2005-01-01T00:00:00-07:00Jan 2005 |
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64Mb Burst CellularRAM P25A to P25Z Transition Guide64Mb Burst CellularRAM P25A to P25Z Transition Guide
- Discusses migrating a design based on the async/page/burst MT45W4MW16B (P25A) to MT45W4MW16BC (P25Z) |
TN-45-09 |
2005-01-01T00:00:00-07:00Jan 2005 |
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64Mb Async/Page CellularRAM P25A to P25Z Transition Guide64Mb Async/Page CellularRAM P25A to P25Z Transition Guide
- Discusses migrating a design based on the async/page MT45W4MW16P (P25A) to the MT45W4MW16PC (P25Z) |
TN-45-08 |
2005-01-01T00:00:00-07:00Jan 2005 |
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Implementing CellularRAM® 2.0 x32 with Two CellularRAM 1.5 x16 DevicesImplementing CellularRAM® 2.0 x32 with Two CellularRAM 1.5 x16 Devices
- Documents how the x32 CR2.0 memory interface can be emulated using a two-die stack of x16 CR 1.5 devices. |
TN-45-07 |
2007-03-01T00:00:00-07:00Mar 2007 |
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Density Migration for x16 Burst Multiplexed PSRAM IntroductionDensity Migration for x16 Burst Multiplexed PSRAM Introduction
- Discusses the design differences to account for when migrating a burst multiplexed device from 16Mb to 64Mb |
TN-45-06 |
2006-01-01T00:00:00-07:00Jan 2006 |
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CellularRAM Multiplexed Async/Burst OperationCellularRAM Multiplexed Async/Burst Operation
- Discusses multiplexing a non-multiplexed CellularRAM device at the substrate level |
TN-45-04 |
2005-03-01T00:00:00-07:00Mar 2005 |
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CellularRAM Asynchronous and Mixed-Mode Slow-Clock WRITE ConcernsCellularRAM Asynchronous and Mixed-Mode Slow-Clock WRITE Concerns
- Discusses the use of Micron CellularRAM-based devices in Mixed Mode operation and slow clock speeds |
TN-45-02 |
2005-09-01T00:00:00-06:00Sep 2005 |
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Functional Differences Between CellularRAM 1.0 and CellularRAM 1.5Functional Differences Between CellularRAM 1.0 and CellularRAM 1.5
- Discusses the functional difference between the CellularRAM 1.0 and CellularRAM 1.5 memory devices |
TN-45-01 |
2005-08-01T00:00:00-06:00Aug 2005 |
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DDR3 Power-Up, Initialization, and ResetDDR3 Power-Up, Initialization, and Reset
- Describes power-up, initialization, and the RESET# pin in DDR3 |
TN-41-07 |
2008-11-01T00:00:00-06:00Nov 2008 |
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DDR3 Termination Data StrobeDDR3 Termination Data Strobe
- Provides guidelines for using the TDQS feature to reduce signal integrity issues associated with mismatched DQS loading in in combined x4-based/x8-based systems |
TN-41-06 |
2008-03-01T00:00:00-07:00Mar 2008 |
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DDR3 Dynamic On-Die TerminationDDR3 Dynamic On-Die Termination
- With DDR3, dynamic ODT provides systems with increased flexibility to optimize termination values for different loading conditions. |
TN-41-04 |
2008-03-01T00:00:00-07:00Mar 2008 |
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DDR3 ZQ CalibrationDDR3 ZQ Calibration
- Describes how the DDR3 SDRAM driver design has been enhanced |
TN-41-02 |
2008-02-01T00:00:00-07:00Feb 2008 |
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Calculating Memory System Power For DDR3Calculating Memory System Power For DDR3
- Details how DDR3 SDRAM consumes power and provides the tools that system designers can use to estimate power consumption. |
TN-41-01 |
2007-08-01T00:00:00-06:00Aug 2007 |
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Wear-Leveling Techniques in NAND Flash DevicesWear-Leveling Techniques in NAND Flash Devices
- Highlights the importance of wear leveling, explains two wear-leveling techniques, and discusses implementing wear leveling |
TN-29-42 |
2008-10-01T00:00:00-06:00Oct 2008 |
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Using COPYBACK Operations to Maintain Data Integrity in NAND Flash DevicesUsing COPYBACK Operations to Maintain Data Integrity in NAND Flash Devices
- Describes how to use COPYBACK operations in NAND Flash devices |
TN-29-41 |
2008-10-01T00:00:00-06:00Oct 2008 |
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Memory Management in NAND Flash ArraysMemory Management in NAND Flash Arrays
- Describes common NAND Flash memory-management methods for effective use of the NAND Flash memory array. |
TN-29-28 |
2007-07-01T00:00:00-06:00Jul 2007 |
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NAND Flash Status Register Response in Cache Programming OperationsNAND Flash Status Register Response in Cache Programming Operations
- Describes status register responses when operating in cache programming modes. |
TN-29-26 |
2007-06-01T00:00:00-06:00Jun 2007 |
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Improving NAND Flash Performance Using Two-Plane Command Enabled Micron DevicesImproving NAND Flash Performance Using Two-Plane Command Enabled Micron Devices
- Describes the performance benefits of Micron two-plane commands, and provides implementation guidelines for making the best use of two-plane capabilities. |
TN-29-25 |
2008-09-01T00:00:00-06:00Sep 2008 |
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Micron Wire-Bonding TechniquesMicron Wire-Bonding Techniques |
TN-29-24 |
2007-06-01T00:00:00-06:00Jun 2007 |
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NAND Flash 101 - An Introduction to NAND Flash and How to Design It In to Your Next ProductNAND Flash 101 - An Introduction to NAND Flash and How to Design It In to Your Next Product |
TN-29-19 |
2006-11-01T00:00:00-06:00Nov 2006 |
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Booting from Embedded MMCBooting from Embedded MMC
- Describes booting from an embedded ARM processor in the MMC environment. |
TN-29-18 |
2008-06-01T00:00:00-06:00Jun 2008 |
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NAND Flash Design and Use ConsiderationsNAND Flash Design and Use Considerations
- Describes design and use considerations for NAND Flash memory, focusing on bad-block identification and error correction. |
TN-29-17 |
2006-08-01T00:00:00-06:00Aug 2006 |
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Boot-from-NAND Using Micron MT28F1G08ABA NAND Flash with the Texas Instruments™ OMAP™ 2420 ProcessorBoot-from-NAND Using Micron MT28F1G08ABA NAND Flash with the Texas Instruments™ OMAP™ 2420 Processor |
TN-29-16 |
2007-06-01T00:00:00-06:00Jun 2007 |
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NAND Flash Performance Improvement Using Internal Data MoveNAND Flash Performance Improvement Using Internal Data Move
- NAND data management capabilities and higher system performance through NAND Flash internal data moves |
TN-29-15 |
2007-06-01T00:00:00-06:00Jun 2007 |
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NAND Flash Performance Increase with PROGRAM PAGE CACHE MODE CommandNAND Flash Performance Increase with PROGRAM PAGE CACHE MODE Command |
TN-29-14 |
2007-06-01T00:00:00-06:00Jun 2007 |
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Monitoring Ready/Busy Status in 2, 4, and 8Gb Micron NAND Flash DevicesMonitoring Ready/Busy Status in 2, 4, and 8Gb Micron NAND Flash Devices |
TN-29-13 |
2007-06-01T00:00:00-06:00Jun 2007 |
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NAND Flash SecurityNAND Flash Security |
TN-29-11 |
2007-06-01T00:00:00-06:00Jun 2007 |
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Freescale™ DragonBall™ MX1 Adaptation for NAND Flash MemoryFreescale™ DragonBall™ MX1 Adaptation for NAND Flash Memory |
TN-29-10 |
2007-06-01T00:00:00-06:00Jun 2007 |
Download NAND Low Level Flash Drivers |
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Hamming Codes for NAND Flash MemoriesHamming Codes for NAND Flash Memories |
TN-29-08 |
2007-06-01T00:00:00-06:00Jun 2007 |
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Small Block vs. Large Block NAND DevicesSmall Block vs. Large Block NAND Devices |
TN-29-07 |
2007-06-01T00:00:00-06:00Jun 2007 |
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Micron NAND Flash Controller via Xilinx Spartan-3 FPGAMicron NAND Flash Controller via Xilinx Spartan-3 FPGA |
TN-29-06 |
2005-04-01T00:00:00-06:00Apr 2005 |
Download VHDL Code |
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Micron ECC Module for NAND Flash via Xilinx™ Spartan™-3 FPGAMicron ECC Module for NAND Flash via Xilinx™ Spartan™-3 FPGA |
TN-29-05 |
2007-06-01T00:00:00-06:00Jun 2007 |
Download VHDL Code |
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Using Micron MT29F2G08AACWP NAND Flash Memory in 2Gb Samsung K9F2G08U0A ApplicationsUsing Micron MT29F2G08AACWP NAND Flash Memory in 2Gb Samsung K9F2G08U0A Applications |
TN-29-04 |
2007-06-01T00:00:00-06:00Jun 2007 |
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Using Micron MT29F2G08AACWP NAND Flash Memory in Toshiba TC58NVG1S3BTG00 ApplicationsUsing Micron MT29F2G08AACWP NAND Flash Memory in Toshiba TC58NVG1S3BTG00 Applications |
TN-29-03 |
2007-06-01T00:00:00-06:00Jun 2007 |
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NAND Flash Performance Increase - Using the Micron® PAGE READ CACHE MODE CommandNAND Flash Performance Increase - Using the Micron® PAGE READ CACHE MODE Command |
TN-29-01 |
2007-06-01T00:00:00-06:00Jun 2007 |
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Sourcing Micron Memory for Intel chipsetsSourcing Micron Memory for Intel chipsets
- Discusses two important functional differences between the 865 and 875 to consider when sourcing memory modules |
TN-04-52 |
2003-08-01T00:00:00-06:00Aug 2003 |
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Comparing Module ParametersComparing Module Parameters |
TN-04-49 |
2003-01-01T00:00:00-07:00Jan 2003 |
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Choosing The Correct 168-Pin DIMM SocketChoosing The Correct 168-Pin DIMM Socket
- Assists designers in selecting the correct 168-pin DIMM socket for any application |
TN-04-47 |
1999-11-01T00:00:00-06:00Nov 1999 |
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Maximizing DRAM Valid Data-Out WindowMaximizing DRAM Valid Data-Out Window
- Explains how to maximize the SDRAM valid data-out window |
TN-04-44 |
1999-02-01T00:00:00-07:00Feb 1999 |
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Memory Module Serial Presence-DetectMemory Module Serial Presence-Detect
- Describes how SDP is essential in helping to standardize the configuration, timing, and manufacturing information of memory modules |
TN-04-42 |
2008-10-01T00:00:00-06:00Oct 2008 |
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Various Methods of DRAM RefreshVarious Methods of DRAM Refresh
- Addresses frequently asked questions about DRAM refresh |
TN-04-30 |
1999-02-01T00:00:00-07:00Feb 1999 |
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SEMI wafer map formatSEMI wafer map format |
TN-00-21 |
2008-07-01T00:00:00-06:00Jul 2008 |
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Understanding Signal IntegrityUnderstanding Signal Integrity
- Describes how memory design, test, and verification tools can be used to the greatest advantage, from conception of a new product through end of life |
TN-00-20 |
2005-06-01T00:00:00-06:00Jun 2005 |
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Thinning Considerations for Wafer ProductsThinning Considerations for Wafer Products
- Information on optimal wafer-thinning processes to meet specific customer requirements |
TN-00-19 |
2004-11-01T00:00:00-06:00Nov 2004 |
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Uprating of Semiconductors for High-Temperature ApplicationsUprating of Semiconductors for High-Temperature Applications
- Describes the issues associated with temperature uprating and the risks involved in using components and/or systems outside the manufacturer’s environmental specifications |
TN-00-18 |
2008-05-01T00:00:00-06:00May 2008 |
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Timing Specification Derating for High Capacitance Output LoadingTiming Specification Derating for High Capacitance Output Loading
- Describes how to create capacitance derating data for Micron products that can then be used in preliminary evaluations of system timing |
TN-00-17 |
2004-05-01T00:00:00-06:00May 2004 |
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Recommended Soldering ParametersRecommended Soldering Parameters |
TN-00-15 |
2007-03-01T00:00:00-07:00Mar 2007 |
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Understanding the Quality and Reliability Requirements for Bare Die ApplicationsUnderstanding the Quality and Reliability Requirements for Bare Die Applications |
TN-00-14 |
2001-09-01T00:00:00-06:00Sep 2001 |
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Accelerate Design Cycles with SIM ModelsAccelerate Design Cycles with SIM Models |
TN-00-09 |
2006-10-01T00:00:00-06:00Oct 2006 |
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Thermal ApplicationsThermal Applications
- Defines a general method and criteria for measuring and ensuring that Micron components and modules do not exceed the maximum allowable temperature. |
TN-00-08 |
2008-05-01T00:00:00-06:00May 2008 |
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IBIS Behavioral ModelsIBIS Behavioral Models |
TN-00-07 |
1999-09-01T00:00:00-06:00Sep 1999 |
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Bypass Capacitor Selection for High-Speed DesignsBypass Capacitor Selection for High-Speed Designs |
TN-00-06 |
1999-09-01T00:00:00-06:00Sep 1999 |
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Moisture Absorption in Plastic PackagesMoisture Absorption in Plastic Packages
- Describes the shipping procedures that ensure Micron’s customers receive memory devices that do not exhibit the popcorn effect |
TN-00-01 |
2007-03-01T00:00:00-07:00Mar 2007 |
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184-pin DDR RDIMM JEDEC Design Standard184-pin DDR RDIMM JEDEC Design Standard
- This specification defines the electrical and mechanical requirements for 184-pin, 2.5V, PC1600/PC2100, 64/72-bit wide, DDR SDRAM RDIMMs. |
JEDEC TN-03 |
2006-05-01T00:00:00-06:00May 2006 |
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SPD JEDEC Standards for UDIMMs, RDIMMs, and SODIMMsSPD JEDEC Standards for UDIMMs, RDIMMs, and SODIMMs
- This application note fully describes the Serial Presence Detect assignments for SPD used on DDR SDRAM Modules |
JEDEC TN-02 |
2001-11-01T00:00:00-06:00Nov 2001 |
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JEDEC 184-pin DDR RDIMM JEDEC Mechanical DimensionsJEDEC 184-pin DDR RDIMM JEDEC Mechanical Dimensions |
JEDEC TN-01 |
1998-08-01T00:00:00-06:00Aug 1998 |
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